DocumentCode :
2778796
Title :
Silicon carbide (SiC): a short history. an analytical approach for SiC power device design
Author :
Brezeanu, G.
Author_Institution :
Univ. Politechnica Bucharest
Volume :
2
fYear :
2005
fDate :
5-5 Oct. 2005
Firstpage :
345
Abstract :
As this year we celebrate a century since the discovery of Silicon Carbide, a short history of semiconductor material is presented in the first part of the paper. Design guidelines, based on simple analytical expressions, for ideal structures of high power SiC Schottky barrier diodes (SBD), are also included
Keywords :
Schottky diodes; history; power semiconductor diodes; silicon compounds; wide band gap semiconductors; SiC; breakdown voltage; power Schottky barrier diodes; power device design; semiconductor material; silicon carbide; Abrasives; Crystalline materials; Crystallization; Crystals; Guidelines; History; Light emitting diodes; Physics; Semiconductor materials; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
Type :
conf
DOI :
10.1109/SMICND.2005.1558796
Filename :
1558796
Link To Document :
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