Title :
A study of the thermal oxidation of TaSi/sub 2/ and Ta/sub 2/Si silicides to form dielectric layers for MIS structures on 4H-SiC
Author :
Pérez-Tomás, A. ; Godignon, P. ; Mestres, N. ; Montserrat, J. ; Millán, J.
Author_Institution :
Centre Nacional de Microelectron., Barcelona
Abstract :
Some physical and electrical characteristics of the insulator layers produced by the deposition of the Ta2Si and TaSi2 tantalum silicides on 4H-SiC substrates and subsequent oxidation are compared in this paper. The thermal oxidation of both silicides on silicon carbide substrates, produces insulator layers with relatively good interfacial properties. The lower interface traps density and oxide charge and especially, the higher dielectric constant, make the product of the Ta2Si oxidation more suitable than the one from TaSi 2 for gate applications. However, the oxidized TaSi2 layers present improved dielectric strength with reduced leakage current
Keywords :
MIS structures; dielectric thin films; electric strength; insulating thin films; interface states; leakage currents; oxidation; permittivity; silicon alloys; titanium alloys; 4H-SiC substrate; MIS structures; SiC; Ta2Si; TaSi2; dielectric constant; dielectric layers; dielectric strength; electrical characteristics; insulator layers; interface traps density; interfacial properties; leakage current; tantalum silicides; thermal oxidation; Dielectric breakdown; Dielectric materials; Dielectric substrates; Dielectrics and electrical insulation; High K dielectric materials; High-K gate dielectrics; Oxidation; Silicides; Silicon carbide; X-ray scattering;
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
DOI :
10.1109/SMICND.2005.1558798
