Contributions to development of high power SiC-IGBT

Author

Avram, Marioara ; Brezeanu, G. ; Avram, A. ; Neagoe, Otilia ; Brezeanu, M. ; Iliescu, C. ; Codreanu, Cecilia ; Voitincu, C.

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest

Volume

2

fYear

2005

fDate

5-5 Oct. 2005

Firstpage

365

Abstract

The IGBT is a device that combines the advantages of simplicity of drive due to the voltage-controlled device with high impedance gate and low power dissipation due to the conductivity modulation effect. For that reason, the SiC-IGBT is used for applications that require a high breakdown voltage of 5 kV and more. The IGBT presented in this paper has one epilayer, a buffer layer between substrate and epilayer to improving the dynamic characteristics and a guard ring/epilayer junction to increase the saturation current. The SiC-IGBT is used in applications that require: higher current conduction capability, power losses efficiently dissipated, operation at higher temperatures, up to 600 degC, and in very harsh environment

Keywords

buffer layers; insulated gate bipolar transistors; power semiconductor devices; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; SiC; breakdown voltage; buffer layer; conductivity modulation effect; current conduction; epilayer; high power SiC-IGBT; power dissipation; power losses; saturation current; voltage-controlled device; Cooling; Current density; Heat sinks; Insulated gate bipolar transistors; Research and development; Semiconductor devices; Silicon carbide; Substrates; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International

Conference_Location

Sinaia

Print_ISBN

0-7803-9214-0

Type

conf

DOI

10.1109/SMICND.2005.1558801

Filename

1558801