Title :
Pulse voltage stress degradation of 4H-SiC Schottky diodes studied by I-V and noise measurements
Author :
Jevtic, Milan ; Hadzi-Vukovic, Jovan ; Dinu, Dan
Author_Institution :
Inst. of Phys., Zemun
Abstract :
Silicon Carbide (SiC) Schottky diodes were stressed with high voltage pulses of 3 to 6KV in an ESD experiment. Diode degradations were studied by I-V and low frequency (LF) noise measurements. The degraded I-V characteristics are similar to the ones of Schottky diodes with barrier height inhomogeneities. Noise results suggest that the LF noise sources are connected with defects near the metal-semiconductor interface in depletion region of degraded SiC diode
Keywords :
Schottky diodes; electrostatic discharge; semiconductor device noise; semiconductor-metal boundaries; silicon compounds; wide band gap semiconductors; 3 to 6 KV; 4H-SiC Schottky diodes; ESD experiment; I-V characteristics; SiC; barrier height inhomogeneities; low frequency noise measurements; metal-semiconductor interface; pulse voltage stress degradation; Degradation; Electrostatic discharge; Frequency; Low-frequency noise; Noise measurement; Pulse measurements; Schottky diodes; Silicon carbide; Stress; Voltage;
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
DOI :
10.1109/SMICND.2005.1558802
