A light-shield a-Si TFT with low dark-leakage currents

Author

Chen, Yeong-E ; Chen, Jr-Hong ; Tai, Ya-Hsiang

Author_Institution

Electron. Res. & Service Org., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

1999

fDate

1999

Firstpage

89

Lastpage

92

Abstract

A light-shield amorphous silicon (a-Si:H) thin film transistor (TFT) with low dark leakage current is developed. The a-Si:H island edge of this TFT is selectively oxidized without affecting the metal/n⁺ a-Si:H layer contact quality, and thus the hole current flowing through the parasitic metal/intrinsic a-Si:H contact at that edge can be blocked. Using this technique, the TFT with effective mobility of 0.7 cm ²/Vsec, subthreshold swing of 0.55 V/dec, and threshold voltage of 1.5 V can be achieved. In addition, the leakage current of the TFT is as low as 0.5 pA at high negative gate bias of -10 V and drain voltage of 10 V

Keywords

amorphous semiconductors; elemental semiconductors; leakage currents; shielding; silicon; thin film transistors; Si; a-Si TFT; amorphous silicon thin film transistor; carrier mobility; dark leakage current; light shield; subthreshold swing; threshold voltage; Amorphous silicon; Electrodes; Electronics industry; Industrial electronics; Leakage current; Lighting; Protection; Sputtering; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on

Conference_Location

Hsinchu

Print_ISBN

957-97347-9-8

Type

conf

DOI

10.1109/ASID.1999.762721

Filename

762721