Title :
Effect of deposition temperature of SiNx/a-Si/n+ a-Si films by monochamber PECVD processing on a-Si TFT electrical characteristics and stability
Author :
Lin, Hui Chu ; Chen, Yeong-E
Author_Institution :
Electron. Res. & Service Org., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
Effect of deposition temperature of monochamber PECVD processing on a-Si TFT electrical characteristics and stability has been investigated. The experimental results show that (1) TFTs deposited at 280°C have higher mobility than the TFTs deposited with other temperature; (2) TFTs deposited with higher temperature have better stability against voltage stressing. When we deposited SiNx/ a-Si/n+a-Si films by monochamber PECVD processing at 280°C, a-Si:H TFTs have higher mobility and better capability against voltage stressing
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; thin film transistors; 280 C; SiN-Si-Si; SiNx/a-Si/n+a-Si film; a-Si TFT; carrier mobility; deposition temperature; electrical characteristics; monochamber PECVD processing; stability; voltage stress; Chromium; Electric variables; Electrodes; Hydrogen; Plasma temperature; Silicon compounds; Sputter etching; Stability; Thin film transistors; Voltage;
Conference_Titel :
Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
957-97347-9-8
DOI :
10.1109/ASID.1999.762724
