DocumentCode :
2779103
Title :
Ellipsometric study of SiN/sub x//nc-Si/SiN/sub x/ multilayers
Author :
Basa, Peter ; Petrik, Peter
Author_Institution :
Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest
Volume :
2
fYear :
2005
fDate :
5-5 Oct. 2005
Firstpage :
417
Abstract :
Low pressure chemical vapour deposited and annealed SiNx/nc-Si/SiNx layers prepared on Si substrates were characterized by spectroscopic ellipsometry. The effective medium approximation model was used to obtain the thickness, the composition and homogeneity of the layers. A significant effect of the deposition time and annealing process was obtained
Keywords :
annealing; chemical vapour deposition; multilayers; nanostructured materials; silicon; silicon compounds; thin films; Si; SiNx-Si-SiNx; annealing process; low pressure chemical vapour deposition; multilayers; silicon substrates; spectroscopic ellipsometry; Annealing; Chemicals; Dielectric materials; Dielectric substrates; Ellipsometry; Nanocrystals; Nonhomogeneous media; Silicon compounds; Spectroscopy; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-9214-0
Type :
conf
DOI :
10.1109/SMICND.2005.1558815
Filename :
1558815
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2779103
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