Nanocluster carbon thin film as a semiconducting layer and feasibility for device application

Author

Gaurav, Nilabh ; Bhatnagar, Saransh ; Raj, Ravi ; De, Shounak ; Niranjana, S. ; Satyanarayana, B.S.

fYear

2008

fDate

18-20 Dec. 2008

Firstpage

1

Lastpage

5

Abstract

Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si:H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe nanocluster carbon thin films as alternative materials for the TFT device application. We present numerical simulations of the TFT, using the semiconductor device simulator ATLAS from silvaco. We study the ON/OFF ratio of the nanocluster carbon thin film based TFT.

Keywords

amorphous semiconductors; carbon; elemental semiconductors; nanostructured materials; semiconductor device models; semiconductor thin films; thin film transistors; C; TFT device numerical simulations; nanocluster carbon thin film; semiconducting layer; semiconductor device simulator ATLAS; silvaco; thin film transistor; Amorphous materials; Nanoscale devices; Organic materials; Semiconductivity; Semiconductor materials; Semiconductor thin films; Silicon; Temperature; Thin film devices; Thin film transistors; Cathodic Arc; Nanocluster carbon thin films; TFT;

fLanguage

English

Publisher

ieee

Conference_Titel

Computing, Communication and Networking, 2008. ICCCn 2008. International Conference on

Conference_Location

St. Thomas, VI

Print_ISBN

978-1-4244-3594-4

Electronic_ISBN

978-1-4244-3595-1

Type

conf

DOI

10.1109/ICCCNET.2008.4787738

Filename

4787738