Title :
Optimization of gain and mode field overlap for efficient proton implanted broad area vertical-cavity laser diodes
Author :
Möller, B. ; Zeeb, E. ; Hackbarth, T. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
Abstract :
Overlap of gain and mode profiles in conventional planar proton implanted VCSELs is measured to be in the order of 10%. The resulting low device efficiency is considerably increased if a beam transforming layer is integrated
Keywords :
ion implantation; laser cavity resonators; laser modes; laser variables measurement; optimisation; semiconductor lasers; surface emitting lasers; VCSELs; beam transforming layer; device efficiency; gain; mode field overlap; optimization; proton implanted broad area vertical-cavity laser diodes; Current measurement; Diode lasers; Filters; Heat sinks; Laser modes; Lenses; Power generation; Protons; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519175
