Effect of parasitic resistance on mobility in laser crystallized LT poly-Si TFTs

Author

Chang, Shih-Chang ; Wu, Chung-Chih ; Lu, I-Min ; Chen, Yeong-E

Author_Institution

Electron. Res. & Service Organ., Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

1999

fDate

1999

Firstpage

293

Lastpage

296

Abstract

Effect of parasitic resistance (Rp) on the mobility in laser-crystallized low-temperature (LT) poly-Si thin film transistors (TFTs) of various channel lengths was investigated The minimum off current at Vd=10 V in these TFTs is scalable and is about 0.15 pA/μm. Significant reduction of mobility was observed in short channel devices due to parasitic resistance. Based on our analysis of the Rp requirement for high-performance short-channel LT poly-Si TFTs, to avoid significant degradation in the mobility for the mobility larger than 300 cm²/Vs, it is necessary to keep Rp below 200 ohm

Keywords

carrier mobility; elemental semiconductors; semiconductor device measurement; silicon; thin film transistors; 10 V; 200 ohm; Si; channel length; high-performance short-channel LT poly-Si TFTs; laser crystallized LT poly-Si TFTs; minimum off current; mobility; parasitic resistance; poly-Si thin film transistors; short channel devices; Contact resistance; Crystallization; Degradation; Doping; Fabrication; Plasma chemistry; Plasma devices; Plasma sources; Plasma temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Display, 1999. ASID '99. Proceedings of the 5th Asian Symposium on

Conference_Location

Hsinchu

Print_ISBN

957-97347-9-8

Type

conf

DOI

10.1109/ASID.1999.762765

Filename

762765