• DocumentCode
    2780023
  • Title

    Single-grain Si thin-film transistors for analog and RF circuit applications

  • Author

    Saputra, N. ; Danesh, M. ; Baiano, A. ; Ishihara, R. ; Long, J.R. ; Metselaar, J.W. ; Beenakker, C.I.M. ; Karaki, N. ; Hiroshima, Y. ; Inoue, S.

  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    107
  • Lastpage
    110
  • Abstract
    Single-grain (SG) Si-TFTs fabricated inside a location-controlled grain have SOI-like performance. To validate their potential for circuit application, key analog and RF building blocks are characterized. An operational amplifier (Opamp) and a voltage reference (Vref) demonstrate DC gain of 50 dB and power supply rejection ratio (PSRR) of 50 dB, respectively. With fT in the GHz range, SG-TFTs enable RF circuit design below 1 GHz. An RF cascode amplifier circuit is demonstrated.
  • Keywords
    operational amplifiers; radiofrequency amplifiers; silicon; thin film transistors; Opamp; PSRR; RF cascode amplifier circuit; Si; Si-TFTs; analog circuit applications; operational amplifier; power supply rejection ratio; single-drain silicon thin-film transistors; Application software; Circuits; Crystallization; Operational amplifiers; Radio frequency; Radiofrequency amplifiers; Substrates; Temperature; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430890
  • Filename
    4430890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2780023