DocumentCode :
2780142
Title :
Power-cycling of DMOS-switches triggers thermo-mechanical failure mechanisms
Author :
Smorodin, Tobias ; Stecher, Matthias ; Glavanovics, Michael ; Wilde, Jürgen
Author_Institution :
Infineon Technol. AG, Munich
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
139
Lastpage :
142
Abstract :
In this article the failure behavior of DMOS-switches under power-cycle stress is shown to be dominated by thermo-mechanical deformation of the metallization. The failure evolves without a significant influence from electromigration stress.
Keywords :
semiconductor device metallisation; semiconductor switches; DMOS-switch; double-diffused-MOS; power-cycle stress; thermo-mechanical failure mechanism; Aluminum; Copper; Electromigration; Failure analysis; Metallization; Switches; Temperature; Thermal stresses; Thermomechanical processes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
ISSN :
1930-8876
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2007.4430898
Filename :
4430898
Link To Document :
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