Title :
Electro-thermal model of a high-voltage IGBT module for realistic simulation of power converters
Author :
Castellazzi, A. ; Ciappa, M. ; Fichtner, W. ; Batista, E. ; Dienot, J.M. ; Mermet-Guyennet, M.
Author_Institution :
Swiss Fed. Inst. of Technol., Zurich
Abstract :
This paper proposes the compact model development of a 6.5 kV field-stop IGBT module, for use in a circuit simulation environment. The model considers the realistic connection of IGBT-diode pairs: the description of semiconductor physics is coupled with self-heating effects; electro-magnetic phenomena associated with the package and layout are also taken into account. A selection of simulation examples demonstrates the validity of the proposed solution.
Keywords :
circuit simulation; insulated gate bipolar transistors; power convertors; IGBT-diode pairs; circuit simulation; compact model development; electro-magnetic phenomena; electro-thermal model; field-stop IGBT module; high-voltage IGBT module; realistic power converter simulation; self-heating effects; semiconductor physics; voltage 6.5 kV; Assembly; Buffer layers; Circuit simulation; Electronic mail; Insulated gate bipolar transistors; Integrated circuit technology; Paper technology; Power system modeling; Semiconductor process modeling; Substrates;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430902
