Accurate electrical measurement of coupled lines on lossy silicon

Author

Arz, Uwe ; Williams, Dylan F. ; Walker, David K. ; Grabinski, Hartmut

Author_Institution

Lab. for Inf. Technol., Hannover Univ., Germany

fYear

2000

fDate

2000

Firstpage

181

Lastpage

184

Abstract

In this paper, we apply a measurement method designed for asymmetric coupled lines to determine the broadband propagation characteristics of symmetric coupled lines fabricated on a highly conductive silicon substrate. We show that the matrices of frequency-dependent propagation constants and characteristic impedances, as extracted from calibrated four-port S-parameter measurements, agree very well with data predicted by numerical calculations

Keywords

S-parameters; coupled transmission lines; electric impedance; elemental semiconductors; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; numerical analysis; silicon; Si; asymmetric coupled lines; broadband propagation characteristics; calibrated four-port S-parameter measurements; characteristic impedance matrices; conductive silicon substrate; coupled lines; electrical measurement; frequency-dependent propagation constant matrices; lossy silicon; numerical calculations; symmetric coupled lines; Conductivity measurement; Couplings; Design methodology; Electric variables measurement; Frequency; Impedance; Loss measurement; Propagation constant; Silicon; Symmetric matrices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging, 2000, IEEE Conference on.

Conference_Location

Scottsdale, AZ

Print_ISBN

0-7803-6450-3

Type

conf

DOI

10.1109/EPEP.2000.895523

Filename

895523