• DocumentCode
    2780316
  • Title

    Lateral HV-MOS transistors (50V) for integration in a 0.18μm CMOS-process

  • Author

    Groß, M. ; Stoisiek, M. ; Uhlig, T. ; Ellmers, C. ; Fürnhammer, F.

  • Author_Institution
    Univ. Erlangen-Nurnberg, Erlangen
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    179
  • Lastpage
    182
  • Abstract
    DS(on) *A = 36.2 mQmm2 at a breakdown voltage of 60 V. The integration of the devices in the CMOS base process uses five additional photo masks.
  • Keywords
    CMOS integrated circuits; power MOSFET; power integrated circuits; CMOS process; breakdown voltage; lateral HV-MOS transistors; photo masks; size 0.18 mum; voltage 50 V; voltage 60 V; CMOS process; CMOS technology; Circuit topology; Costs; Doping profiles; Foundries; Signal processing; Substrates; System-on-a-chip; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430908
  • Filename
    4430908
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2780316