DocumentCode
2780345
Title
Area dependent simulation model for the double exponential effect in I(V)-characteristics of solar cells
Author
Sams, M. ; Lackner, C. ; Ostermann, T.
Author_Institution
Inst. for Integrated Circuits, Johannes Kepler Univ., Linz, Austria
fYear
2010
fDate
20-25 June 2010
Abstract
In contrary to classical explanations of the double exponential effect using a two-diode-model, based on two different recombination processes, an area dependent model using a one-diode-model with modifiable diode quality factors can also explain the double exponential effect in I(V)-characteristics of solar cells.
Keywords
Q-factor; semiconductor diodes; solar cells; I(V)-characteristics; area dependent simulation; double exponential effect; quality factors; recombination process; solar cells; two diode model;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616835
Filename
5616835
Link To Document