DocumentCode :
2780573
Title :
Critique of high-frequency performance of carbon nanotube FETs
Author :
Pulfrey, David L.
Author_Institution :
Univ. of British Columbia, Vancouver
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
234
Lastpage :
238
Abstract :
The emerging body of literature on the high-frequency performance of carbon nanotube field-effect transistors (CNFETs) is critically reviewed. The focus is on the figure-of-merit fT, the common-source, short-circuit current gain. The intentions are: to direct attention to the most relevant measured data; to compare this data with record values for other transistors, and with predicted results for CNFETs; to explain the large spread in predicted data; to offer a prognosis for high-frequency CNFETs.
Keywords :
carbon nanotubes; field effect transistors; carbon nanotube FET; field-effect transistors; short-circuit current gain; CNTFETs; Carbon nanotubes; Conductivity; FETs; Heterojunction bipolar transistors; Impedance; Nanoscale devices; Parasitic capacitance; Photonic band gap; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
ISSN :
1930-8876
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2007.4430921
Filename :
4430921
Link To Document :
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