• DocumentCode
    2780573
  • Title

    Critique of high-frequency performance of carbon nanotube FETs

  • Author

    Pulfrey, David L.

  • Author_Institution
    Univ. of British Columbia, Vancouver
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    234
  • Lastpage
    238
  • Abstract
    The emerging body of literature on the high-frequency performance of carbon nanotube field-effect transistors (CNFETs) is critically reviewed. The focus is on the figure-of-merit fT, the common-source, short-circuit current gain. The intentions are: to direct attention to the most relevant measured data; to compare this data with record values for other transistors, and with predicted results for CNFETs; to explain the large spread in predicted data; to offer a prognosis for high-frequency CNFETs.
  • Keywords
    carbon nanotubes; field effect transistors; carbon nanotube FET; field-effect transistors; short-circuit current gain; CNTFETs; Carbon nanotubes; Conductivity; FETs; Heterojunction bipolar transistors; Impedance; Nanoscale devices; Parasitic capacitance; Photonic band gap; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430921
  • Filename
    4430921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2780573