Title : 
Critique of high-frequency performance of carbon nanotube FETs
         
        
            Author : 
Pulfrey, David L.
         
        
            Author_Institution : 
Univ. of British Columbia, Vancouver
         
        
        
        
        
        
            Abstract : 
The emerging body of literature on the high-frequency performance of carbon nanotube field-effect transistors (CNFETs) is critically reviewed. The focus is on the figure-of-merit fT, the common-source, short-circuit current gain. The intentions are: to direct attention to the most relevant measured data; to compare this data with record values for other transistors, and with predicted results for CNFETs; to explain the large spread in predicted data; to offer a prognosis for high-frequency CNFETs.
         
        
            Keywords : 
carbon nanotubes; field effect transistors; carbon nanotube FET; field-effect transistors; short-circuit current gain; CNTFETs; Carbon nanotubes; Conductivity; FETs; Heterojunction bipolar transistors; Impedance; Nanoscale devices; Parasitic capacitance; Photonic band gap; Transconductance;
         
        
        
        
            Conference_Titel : 
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
         
        
            Conference_Location : 
Munich
         
        
        
            Print_ISBN : 
978-1-4244-1123-8
         
        
            Electronic_ISBN : 
1930-8876
         
        
        
            DOI : 
10.1109/ESSDERC.2007.4430921