Title :
A novel graphene channel field effect transistor with Schottky tunneling source and drain
Author :
Zhu, Jing ; Woo, Jason C S
Author_Institution :
California Univ. Los Angeles, Los Angeles
Abstract :
In this paper, a novel concept of graphene channel FET with highly doped silicon source/drain is proposed. The current-voltage characteristics are analyzed and the optimized design parameters are presented by numerical analysis and device simulation. Such novel graphene channel MOSFETs on FDSOI or on insulator are found to have much superior current drive and transconductance than silicon MOSFETs.
Keywords :
MOSFET; Schottky gate field effect transistors; semiconductor device models; Schottky tunneling source and drain; current-voltage characteristics; device simulation; graphene channel MOSFET; graphene channel field effect transistor; metal-oxide-semiconductor field effect transistor; Analytical models; Current-voltage characteristics; Design optimization; FETs; Insulation; MOSFETs; Numerical analysis; Silicon; Transconductance; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430923
