Phonon-scattering effects in CNT- FETs with different dimensions and dielectric materials

Author

Grassi, Roberto ; Poli, Stefano ; Reggiani, Susanna ; Gnudi, Antonio ; Rudan, Massimo ; Baccarani, Giorgio

Author_Institution

Univ. of Bologna, Bologna

fYear

2007

fDate

11-13 Sept. 2007

Firstpage

247

Lastpage

250

Abstract

The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off-current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO₂ and of 10 nm with HfO₂ as gate dielectrics.

Keywords

carbon nanotubes; dielectric materials; field effect transistors; high-k dielectric thin films; phonons; CNT-FET; NEGF formalism; acoustic phonon scattering; band-to-band tunneling; dielectric materials; full-quantum transport model; high-k dielectric; optical phonon scattering; phonon-scattering effects; Acoustic devices; Acoustic scattering; Dielectric materials; FETs; High-K gate dielectrics; Measurement; Optical scattering; Phonons; Scalability; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European

Conference_Location

Munich

ISSN

1930-8876

Print_ISBN

978-1-4244-1123-8

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2007.4430924

Filename

4430924