Title :
Phonon-scattering effects in CNT- FETs with different dimensions and dielectric materials
Author :
Grassi, Roberto ; Poli, Stefano ; Reggiani, Susanna ; Gnudi, Antonio ; Rudan, Massimo ; Baccarani, Giorgio
Author_Institution :
Univ. of Bologna, Bologna
Abstract :
The impact of acoustic and optical phonon scattering on the performance of CNT-FETs is investigated using a full-quantum transport model within the NEGF formalism. Different gate lengths, dielectric materials and chiralities are considered. It is shown that the use of a high-k dielectric improves the off-current limited by phonon-assisted band-to-band tunneling. The device scalability is demonstrated: with an oxide thickness of 1.5 nm, good performance metrics are obtained down to a gate length of 15 nm with SiO2 and of 10 nm with HfO2 as gate dielectrics.
Keywords :
carbon nanotubes; dielectric materials; field effect transistors; high-k dielectric thin films; phonons; CNT-FET; NEGF formalism; acoustic phonon scattering; band-to-band tunneling; dielectric materials; full-quantum transport model; high-k dielectric; optical phonon scattering; phonon-scattering effects; Acoustic devices; Acoustic scattering; Dielectric materials; FETs; High-K gate dielectrics; Measurement; Optical scattering; Phonons; Scalability; Tunneling;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430924
