X-ray investigation of thick epitaxial GaAs/InGaAs layers on Ge pseudosubstrates

We present an investigation of a series of samples with GaAs/InGaAs layers grown on Ge/Si pseudo-substrates. The strain in the GaAs and InGaAs layers were calculated after measuring the lattice constants of the layers using the X-ray diffraction technique. Both layers were found to be under low tensile stress resulting from the lattice mismatch and the difference in thermal expansion coefficients between the adjacent layers. We explore a new concept based on counterbalancing this thermal stress.