DocumentCode :
2780758
Title :
Mobility issues in double-gate SOI MOSFETs: Characterization and analysis
Author :
Rodriguez, N. ; Cristoloveanu, S. ; Nguyen, L. Pham ; Gamiz, F.
Author_Institution :
Inst. de Microelectron., Grenoble
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
271
Lastpage :
274
Abstract :
The carrier mobility in ultra-thin SOI transistors was measured at the front channel, back channel and in double gate mode (DG). A model for generalizing the mobility extraction method, based on the F-function, is proposed. In DG-mode the apparent mobility is the sum of front and back channel mobilities only if the two channels are independent (partially depleted or relatively thick fully depleted MOSFETs). In ultrathin transistors, the coupling effect should be accounted for achieving a balanced DG-mode. An outstanding apparent mobility enhancement in DG-mode is measured which cannot be explained by a 2-channels model. This result gives clear evidence of the benefit of volume inversion.
Keywords :
MOSFET; carrier mobility; silicon-on-insulator; carrier mobility; channel mobilities; double-gate SOI MOSFET; mobility extraction method; outstanding apparent mobility enhancement; ultra-thin SOI transistors; volume inversion; Analytical models; Attenuation; Current measurement; Electrical resistance measurement; Insulation; MOSFETs; Physics; Semiconductor films; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
ISSN :
1930-8876
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2007.4430930
Filename :
4430930
Link To Document :
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