• DocumentCode
    2780773
  • Title

    Reliable extraction of metal gate work function by combining two electrical characterization methods

  • Author

    Charbonnier, M. ; Mitard, J. ; Leroux, C. ; Ghibaudo, G. ; Cosnier, V. ; Besson, P. ; Martin, F. ; Reimbold, G.

  • Author_Institution
    MINATEC, Grenoble
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    275
  • Lastpage
    278
  • Abstract
    In this paper, we extract the gate work function of metal/High-K stacks (WFM) with an internal photoemission (IPE) based method and a C(V) characterization method. We attempt to apply both of them on the same specially designed samples. We show that it leads to a better reliability of WFM and highlights new phenomena.
  • Keywords
    MOS capacitors; circuit reliability; high-k dielectric thin films; work function; MOS capacitors; electrical characterization; internal photoemission; metal gate work function; metal-high-K stacks; reliability; reliable extraction; Annealing; Channel bank filters; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; Microelectronics; Photoelectricity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430931
  • Filename
    4430931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2780773