DocumentCode :
2780773
Title :
Reliable extraction of metal gate work function by combining two electrical characterization methods
Author :
Charbonnier, M. ; Mitard, J. ; Leroux, C. ; Ghibaudo, G. ; Cosnier, V. ; Besson, P. ; Martin, F. ; Reimbold, G.
Author_Institution :
MINATEC, Grenoble
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
275
Lastpage :
278
Abstract :
In this paper, we extract the gate work function of metal/High-K stacks (WFM) with an internal photoemission (IPE) based method and a C(V) characterization method. We attempt to apply both of them on the same specially designed samples. We show that it leads to a better reliability of WFM and highlights new phenomena.
Keywords :
MOS capacitors; circuit reliability; high-k dielectric thin films; work function; MOS capacitors; electrical characterization; internal photoemission; metal gate work function; metal-high-K stacks; reliability; reliable extraction; Annealing; Channel bank filters; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; Microelectronics; Photoelectricity; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
ISSN :
1930-8876
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2007.4430931
Filename :
4430931
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2780773
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