DocumentCode
2780785
Title
A modified constant field charge pumping method for sensitive profiling of near-junction charges
Author
Von Emden, Walter ; Krautschneider, Wolfgang ; Tempe, Georg ; Hagenbeck, Rainer ; Beug, M. Florian
Author_Institution
Hamburg Univ. of Technol., Hamburg
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
279
Lastpage
282
Abstract
The functionality of nonvolatile memories with lateral multi-bit charge storage capabilities like NROM/TwinFlash is critically related to spatial separation of the injected charge quantities to discriminate different logical states. In this paper we develop an adapted methodology to extract local charge densities based on the constant field charge pumping method. Our method overcomes the problem of non self-consistency of conventional constant field charge pumping by determination of the spatial coordinate after every injection step. The method is demonstrated to directly extract the electron/hole mismatch after program and erase injection.
Keywords
flash memories; random-access storage; NROM; TwinFlash; electron/hole mismatch; erase injection; injected charge quantities; lateral multibit charge storage capabilities; local charge densities; logical states; modified constant field charge pumping method; near-junction charges; nonvolatile memories; program injection; sensitive profiling; Charge carrier processes; Charge pumps; Electron traps; Extrapolation; Frequency; Geometry; Nonvolatile memory; Signal analysis; Solid modeling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location
Munich
ISSN
1930-8876
Print_ISBN
978-1-4244-1123-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2007.4430932
Filename
4430932
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