• DocumentCode
    2780826
  • Title

    Analytical and compact modelling of the I-MOS (impact ionization MOS)

  • Author

    Mayer, F. ; Poiroux, T. ; Carval, G. Le ; Clavelier, L. ; Deleonibus, S.

  • Author_Institution
    CEA LETI, Grenoble
  • fYear
    2007
  • fDate
    11-13 Sept. 2007
  • Firstpage
    291
  • Lastpage
    294
  • Abstract
    The Impact Ionization MOSFET (I-MOS) is a potential candidate for the post-CMOS era, allowing very sharp subthreshold slopes, down to a few mV/dec. For the first time, an analytical model is developed for this new kind of device. In the first part, the analytical model is explained and compared with TCAD results. The second part deals with the compact modeling of the I-MOS, allowing simulations of inverters.
  • Keywords
    MOSFET; impact ionisation; invertors; MOSFET; TCAD; impact ionization MOS; inverters; Analytical models; CMOS technology; Doping; Equations; Impact ionization; Inverters; MOSFET circuits; Neodymium; Semiconductor films; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
  • Conference_Location
    Munich
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-1123-8
  • Electronic_ISBN
    1930-8876
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2007.4430935
  • Filename
    4430935
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2780826