Title :
Analytical and compact modelling of the I-MOS (impact ionization MOS)
Author :
Mayer, F. ; Poiroux, T. ; Carval, G. Le ; Clavelier, L. ; Deleonibus, S.
Author_Institution :
CEA LETI, Grenoble
Abstract :
The Impact Ionization MOSFET (I-MOS) is a potential candidate for the post-CMOS era, allowing very sharp subthreshold slopes, down to a few mV/dec. For the first time, an analytical model is developed for this new kind of device. In the first part, the analytical model is explained and compared with TCAD results. The second part deals with the compact modeling of the I-MOS, allowing simulations of inverters.
Keywords :
MOSFET; impact ionisation; invertors; MOSFET; TCAD; impact ionization MOS; inverters; Analytical models; CMOS technology; Doping; Equations; Impact ionization; Inverters; MOSFET circuits; Neodymium; Semiconductor films; Space charge;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430935
