DocumentCode :
2780917
Title :
Uniaxial strained silicon n-FETs on silicon-germanium-on-insulator substrates with an e-Si0.7Ge0.3 stress transfer layer and source/drain stressors for performance enhancement
Author :
Wang, Grace Huiqi ; Toh, Eng-Huat ; Foo, Yong-Lim ; Tripathy, S. ; Balakumar, S. ; Lo, Guo-Qiang ; Samudra, Ganesh ; Yeo, Yee-Chia
Author_Institution :
Nat. Univ. of Singapore, Singapore
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
311
Lastpage :
314
Abstract :
We demonstrate a novel strained Si n-FET where the strain-transfer efficiency of lattice-mismatched source/drain (S/D) stressors is increased significantly by the interaction between an embedded Si0.7Ge0.3 stress transfer layer (STL) and the SiC source/drain (S/D) stressors. The compliance of the SiGe-OI STL caused significant uniaxial tensile strain to be induced in the Si channel. Devices with gate length LG down to 50 nm were fabricated. The strain effects resulted in 59% drive current improvement compared to unstrained Si control n-FETs. In addition, the incorporation of a tensile stress SiN liner improves Id,sat by an additional 10%. Improvement in source-side injection velocity as a result of the lattice interaction between the Si0.7Ge0.3 STL and S/D regions is further investigated.
Keywords :
field effect transistors; silicon-on-insulator; substrates; tensile testing; Si0.7Ge0.3; lattice-mismatched source/drain stressors; performance enhancement; silicon-germanium-on-insulator substrates; strain effects; stress transfer layer; uniaxial strained silicon n-FETs; uniaxial tensile strain; Epitaxial growth; Etching; Fabrication; Germanium silicon alloys; Implants; Silicon carbide; Silicon compounds; Silicon germanium; Strain control; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
ISSN :
1930-8876
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2007.4430940
Filename :
4430940
Link To Document :
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