DocumentCode
2781002
Title
Expanding Thermal Plasma deposited a-Si:H thin films for surface passivation of c-Si wafers
Author
Illiberi, A. ; Sharma, K. ; Creatore, M. ; Kessels, W.M.M. ; van de Sanden, M.C.M.
Author_Institution
Dept. of Appl. Phys., Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear
2010
fDate
20-25 June 2010
Abstract
Low thermal stability of hydrogenated amorphous silicon (a-Si:H) thin films limits their widespread use for surface passivation of c-Si wafers on the rear side of solar cells. We show that thermal stability of a-Si:H surface passivation is increased significantly by a hydrogen rich a-Si:H bulk which acts as an H reservoir for the a-Si:H/c-Si interface, when a spontaneous release of H from the bulk is induced by high temperature (450°C) annealing.
Keywords
amorphous semiconductors; annealing; elemental semiconductors; passivation; semiconductor thin films; silicon; solar cells; thermal stability; Si:H; c-Si wafers; high temperature annealing; hydrogenated amorphous silicon thin films; solar cells; surface passivation; temperature 450 C; thermal plasma; thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616869
Filename
5616869
Link To Document