Title :
1T-capacitorless bulk memory: Scalability and signal impact
Author :
Gouya, Gerald ; Malinge, Pierre ; Garni, Brad ; Genevaux, Franck ; Ferrant, Richard ; PUGET, Sophie ; Gravoulet, Valery ; Bonnaud, Olivier
Author_Institution :
Freescale, Crolles
Abstract :
The 1-transistor floating body (1TFB) memory presents a possible solution for embedded memories, as it appears to scale, and does so with standard processing. This study investigates the signal limits of 1TFB memory as technology scales. It shows that although the signal DeltaVth remains nearly constant with scaling, the memory cells become susceptible to disturbance because the amount of stored charge decreases. In addition, the transistor mismatch increases with scaling, thus limiting the ability of conventional sensing methods to correctly read the memory.
Keywords :
semiconductor storage; transistor circuits; 1-transistor floating body; 1T-capacitorless bulk memory; memory cells; signal impact; Diodes; Impact ionization; Implants; Limiting; P-n junctions; Scalability; Signal design; Signal processing; Silicon; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430945