DocumentCode :
2781004
Title :
1T-capacitorless bulk memory: Scalability and signal impact
Author :
Gouya, Gerald ; Malinge, Pierre ; Garni, Brad ; Genevaux, Franck ; Ferrant, Richard ; PUGET, Sophie ; Gravoulet, Valery ; Bonnaud, Olivier
Author_Institution :
Freescale, Crolles
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
330
Lastpage :
333
Abstract :
The 1-transistor floating body (1TFB) memory presents a possible solution for embedded memories, as it appears to scale, and does so with standard processing. This study investigates the signal limits of 1TFB memory as technology scales. It shows that although the signal DeltaVth remains nearly constant with scaling, the memory cells become susceptible to disturbance because the amount of stored charge decreases. In addition, the transistor mismatch increases with scaling, thus limiting the ability of conventional sensing methods to correctly read the memory.
Keywords :
semiconductor storage; transistor circuits; 1-transistor floating body; 1T-capacitorless bulk memory; memory cells; signal impact; Diodes; Impact ionization; Implants; Limiting; P-n junctions; Scalability; Signal design; Signal processing; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
ISSN :
1930-8876
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2007.4430945
Filename :
4430945
Link To Document :
بازگشت