Title :
An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles
Author :
Duvernay, Julien ; Borot, Gaël ; Chevalier, Pascal ; Dutartre, Didier ; Pantel, Roland ; Rubaldo, Laurent ; Schwartzmann, Thierry ; Vandelle, Benoît ; Chantre, Alain
Author_Institution :
STMicroelectron., Crolles
Abstract :
In this paper, we describe the development of a pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. The device physics and the impact of the valence band barriers taking place in pnp HBTs are detailed. The Ge and impurities profiles optimization necessary to limit their negative influence is particularly described. Static and dynamic device characteristics are discussed.
Keywords :
elemental semiconductors; germanium; germanium compounds; heterojunction bipolar transistors; impurities; silicon; silicon compounds; Si-SiGeC; impurities profiles; pnp HBT; self-aligned selective epitaxy emitter/base architecture; valence band barriers; Boron; Dielectric substrates; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Photonic band gap; Physics; Silicon germanium;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430949
