DocumentCode
2781061
Title
An experimental and simulation study of pnp Si/SiGeC HBTs using box-like Ge profiles
Author
Duvernay, Julien ; Borot, Gaël ; Chevalier, Pascal ; Dutartre, Didier ; Pantel, Roland ; Rubaldo, Laurent ; Schwartzmann, Thierry ; Vandelle, Benoît ; Chantre, Alain
Author_Institution
STMicroelectron., Crolles
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
346
Lastpage
349
Abstract
In this paper, we describe the development of a pnp SiGeC HBT using a self-aligned selective epitaxy emitter/base architecture. The device physics and the impact of the valence band barriers taking place in pnp HBTs are detailed. The Ge and impurities profiles optimization necessary to limit their negative influence is particularly described. Static and dynamic device characteristics are discussed.
Keywords
elemental semiconductors; germanium; germanium compounds; heterojunction bipolar transistors; impurities; silicon; silicon compounds; Si-SiGeC; impurities profiles; pnp HBT; self-aligned selective epitaxy emitter/base architecture; valence band barriers; Boron; Dielectric substrates; Epitaxial growth; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Photonic band gap; Physics; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location
Munich
ISSN
1930-8876
Print_ISBN
978-1-4244-1123-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2007.4430949
Filename
4430949
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