Title :
A novel base current phenomenon in SiGe HBTs operating in inverse mode
Author :
Appaswamy, Aravind ; Cressler, John D. ; Niu, Guofu
Author_Institution :
Georgia Inst. of Technol., Atlanta
Abstract :
The inverse mode operation of SiGe HBTs down to cryogenic temperatures is examined for the first time. A novel base current "flattening" is observed at low temperatures, and the physics behind this unusual current-gain enhancing behavior is examined in detail using a combination of measurement and TCAD simulations.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; HBT; SiGe; base current phenomenon; inverse mode; Cryogenics; Drives; Germanium silicon alloys; Heterojunction bipolar transistors; High performance computing; Performance evaluation; Scattering parameters; Silicon germanium; Temperature; Testing;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430950
