DocumentCode
2781080
Title
A novel base current phenomenon in SiGe HBTs operating in inverse mode
Author
Appaswamy, Aravind ; Cressler, John D. ; Niu, Guofu
Author_Institution
Georgia Inst. of Technol., Atlanta
fYear
2007
fDate
11-13 Sept. 2007
Firstpage
350
Lastpage
353
Abstract
The inverse mode operation of SiGe HBTs down to cryogenic temperatures is examined for the first time. A novel base current "flattening" is observed at low temperatures, and the physics behind this unusual current-gain enhancing behavior is examined in detail using a combination of measurement and TCAD simulations.
Keywords
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; HBT; SiGe; base current phenomenon; inverse mode; Cryogenics; Drives; Germanium silicon alloys; Heterojunction bipolar transistors; High performance computing; Performance evaluation; Scattering parameters; Silicon germanium; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location
Munich
ISSN
1930-8876
Print_ISBN
978-1-4244-1123-8
Electronic_ISBN
1930-8876
Type
conf
DOI
10.1109/ESSDERC.2007.4430950
Filename
4430950
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