Title :
MMIC modeling technique and its application
Author :
Chen, Xiaojian ; Chen, Xuejun ; Cen, Yuanfei ; Dai, Yongsheng ; Wan, Junxian ; Li, Hui
Author_Institution :
Nanjing Electron. Devices Inst., China
Abstract :
The technique of MMIC modeling at Nanjing Electronic Devices Institute (NEDI) is presented. The layout design of the modeling FET (PHEMT), microwave probing calibration, model extraction and statistics/verification are introduced and discussed. By using the established models, several MMICs such as power amplifiers, LNAs, mixers, switches and phase shifters were successfully developed, covering applications in transmission, reception and controlled circuit with frequencies up to the 20 GHz range
Keywords :
HEMT integrated circuits; MESFET integrated circuits; field effect MMIC; integrated circuit design; integrated circuit modelling; 20 GHz; FET layout design; FET modelling; LNA; MESFET; MMIC modeling technique; NEDI; PHEMT; microwave probing calibration; mixers; model extraction; phase shifters; power amplifiers; statistics/verification; switches; Calibration; MMICs; Microwave FETs; Microwave devices; PHEMTs; Phase shifters; Power amplifiers; Statistics; Switches; Switching circuits;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location :
Beijing
Print_ISBN :
0-7803-5743-4
DOI :
10.1109/ICMMT.2000.895596
