Title :
Characterization of PVD aluminum nitride for heat spreading in RF IC's
Author :
Spina, L. La ; Nanver, L.K. ; Schellevis, H. ; Iborra, E. ; Clement, M. ; Olivares, J.
Author_Institution :
Delft Univ. of Technol., Delft
Abstract :
Physical-vapor-deposited aluminum nitride, developed for heat spreading in RF ICs, is characterized by fabricating and measuring several different types of test structures. Among other things, it is shown that the material is a good dielectric insulator and has suitably low mechanical stress and piezoelectric response. With layers as thick as 6 mum, the electrothermal instabilities in a silicon-on-glass bipolar process are drastically reduced.
Keywords :
aluminium compounds; heat sinks; integrated circuits; thermal management (packaging); vapour deposition; RF integrated circuit; dielectric insulator; electrothermal instability; mechanical stress; physical-vapor-deposited aluminum nitride; piezoelectric response; silicon-on-glass bipolar process; Aluminum nitride; Atherosclerosis; Dielectric materials; Dielectric measurements; Dielectrics and electrical insulation; Electrothermal effects; Piezoelectric materials; Radio frequency; Stress; Testing;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430951
