Title :
Combinatorial study of thin-film Cu2ZnSnS4 synthesis via metal precursor sulfurization
Author :
Teeter, G. ; Du, Honglei ; Leisch, J.E. ; Young, M. ; Yan, F. ; Johnston, S.W. ; Dippo, P. ; Kuciauskas, D. ; Romero, M.J. ; Newhouse, P. ; Asher, S.E. ; Ginley, D.S.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
Abstract :
We report on studies related to the synthesis of thin-film Cu2ZnSnS4 via sulfurization of metal-precursor thin films. Combinatorially graded thin-film Cu-Zn-Sn library samples spanning various regions of the ternary Cu-Zn-Sn phase diagram were deposited at temperatures below 375 K and subsequently sulfurized in a high-vacuum system equipped with a sulfur valved-cracking source at temperatures from 600 K to 675 K. Comparisons of x-ray fluorescence and x-ray diffraction data from pre- and post-sulfurization films have revealed correlations between processing conditions, film composition, and the crystalline phases present. We have also performed cathodoluminescence and photoluminescence measurements and identified emission features consistent with the formation of the Cu2ZnSnS4.
Keywords :
X-ray diffraction; X-ray emission spectra; X-ray fluorescence analysis; cathodoluminescence; copper compounds; fluorescence; phase diagrams; photoluminescence; thin films; tin compounds; vacuum deposition; zinc compounds; Cu-Zn-Sn library samples; Cu-Zn-Sn phase diagram; Cu2ZnSnS4; X-ray diffraction; X-ray fluorescence; cathodoluminescence measurements; combinatorially graded thin-film; crystalline phases; high-vacuum system; metal precursor sulfurization; photoluminescence measurements; postsulfurization films; presulfurization films; sulfur valved-cracking source; temperature 600 K to 675 K; thin-film synthesis;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5616874
