Title :
Transient charge pumping as a new technique for a higher sensitivity SOI MOSFET photodetector
Author :
Harik, Louis ; Sallese, Jean-Michel ; Kayal, Maher
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Lausanne
Abstract :
In this paper, we have used the partially depleted SOI MOSFET to measure the intensity of light. The charge pumping technique was used to get rid of the photogenerated carriers in the body in an attempt to keep the drain current constant. Using this technique flux densities as low as 2 mW/m2 were measured.
Keywords :
MOSFET; photodetectors; phototransistors; silicon-on-insulator; SOI MOSFET photodetector; drain current; partially depleted SOI MOSFET; photogenerated carriers; transient charge pumping technique; Charge pumps; Current measurement; MOSFET circuits; Optical films; Optical pumping; Optical sensors; Photodetectors; Silicon on insulator technology; Threshold voltage; Wavelength measurement;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430954
