Title :
Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation
Author :
Rao, Padmakumar R. ; Wang, Xinyang ; Theuwissen, Albert J P
Author_Institution :
Delft Univ. of Technol., Delft
Abstract :
In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in deep-submicron technology is developed to study the sensor´s sensitivity towards gamma-ray irradiation. It is found that the spectral degradation due to gamma-rays is mainly through changes in the top-layer material characteristics and Si/SiO2 interface. There is a non-trivial contribution of STI (shallow trench isolations) towards the dark current of the sensor, and it turns out to be highly sensitive to radiation damage.
Keywords :
CMOS image sensors; gamma-ray effects; CMOS image sensor; Si-SiO2 interface; deep-submicron technology; gamma-ray irradiation; shallow trench isolation; spectral response; CMOS image sensors; CMOS technology; Dark current; Degradation; Electrons; Equations; Instruments; Ionization; Leakage current; Photodiodes;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430955
