Microwave performance of vertical dual carrier field effect transistors and integrated circuits

The authors discuss the device physics and microwave performance of the Vertical Dual Carrier Field Effect Transistor (VDCFET) and VDCFET ICs. The Si VDCFET and Si VDCFEIC have the advantages of very short effective channel, i.e. length less than 20 nm. The GaAs VDCFET and GaAs VDCFEIC have the further advantages of higher electron mobility. They can also be fabricated by molecular beam epitaxy or the MOCVD process. This new mode of operation opens up a new wide application field with better performance, including microwave, switching, and even System on a chip (SOC) application for sub-20 nm effective channel length. This is a low voltage family of devices. However, these can also be power devices through parallel connection in a matrix form of many cells to give currents in the range of amperes