Title :
New fabrication method and emission characteristics of silicon field emitters
Author :
Hashiguchi, Gen ; Sakamoto, Hikaru ; Kanazawa, Satoshi ; Mimura, Hidenori
Author_Institution :
Electron. Res. Lab., Nippon Steel Corp., Kanagawa, Japan
Abstract :
A new fabrication method of silicon field emitters has been proposed, which combines the Si KOH anisotropic etching and local-oxidation of silicon (LOCOS) techniques to form the emitter tip. Wedge-shaped and conical-shaped silicon emitters fabricated using this technique had an extremely well-defined structure indicative of good reproducibility and uniformity of the fabrication process. The emission characteristics have been examined under UHV conditions and it has been revealed that both the anode and gate currents are governed by the Fowler-Nordheim mechanism and show an excellent emission characteristic.<>
Keywords :
electron field emission; elemental semiconductors; etching; oxidation; semiconductor technology; silicon; vacuum microelectronics; Fowler-Nordheim mechanism; LOCOS; Si; Si KOH anisotropic etching; UHV conditions examination; conical-shaped silicon emitters; emission characteristics; emitter tip; fabrication method; local-oxidation; silicon field emitters; wedge-shaped silicon emitters; Anisotropic magnetoresistance; Chromium; Etching; Fabrication; Laboratories; Microelectronics; Oxidation; Reproducibility of results; Scanning electron microscopy; Silicon compounds;
Conference_Titel :
Emerging Technologies and Factory Automation, 1994. ETFA '94., IEEE Symposium on
Conference_Location :
Tokyo, Japan
Print_ISBN :
0-7803-2114-6
DOI :
10.1109/ETFA.1994.402026
