Title :
The ESBT® (Emitter-Switched Bipolar Transistor): a new monolithic power actuator technology devoted to high voltage and high frequency applications
Author :
Enea, V. ; Kroell, D. ; Messina, M. ; Ronsisvalle, C.
Author_Institution :
STMicroelectron., Catania
Abstract :
A novel power actuator having a good switching behaviour along with a highly performing on-state conduction characteristic is presented. The device is a monolithic integration of a high voltage bipolar transistor and a low voltage MOSFET connected in cascode configuration. The sandwich structure so obtained has shown very attractive electrical performance and ruggedness. This paper also demonstrates how this new structure can be easily tailored according to the application requirements. Finally a comparison with other power actuator such as a high voltage power MOSFET and a fast IGBT proves its superiority in terms of energy losses especially at high working frequencies.
Keywords :
cascade systems; electric actuators; insulated gate bipolar transistors; power MOSFET; power semiconductor devices; sandwich structures; cascode configuration; emitter-switched bipolar transistor; high voltage bipolar transistor; low voltage MOSFET; monolithic power actuator technology; on-state conduction characteristic; sandwich structure; switching behaviour; Actuators; Bipolar transistors; Energy loss; Frequency; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Monolithic integrated circuits; Power MOSFET; Sandwich structures;
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2007.4430967
