Microwave performance of SOI lateral dual carrier field effect transistors and integrated circuits (SOI LDCFET and SOI DCFEIC)

Author

Huang, C. ; Yang, Y.H. ; Huang, D.H. ; Wu, C.L. ; Li, Y.B. ; Xu, Y.Z.

Author_Institution

China Aerosp. Corp., Beijing, China

fYear

2000

fDate

2000

Firstpage

28

Lastpage

31

Abstract

We have discovered and studied a new mode of operation of transistors and integrated circuits-dual carrier field effect transistors (DCFETs) and integrated circuits (DCFEICs). In this paper we present the device physics theory and some of the DC measurement results of one type of structure for our new mode of operation. We show that, with mature SOI technology, the SOI lateral DCFET (LDCFET) is predicted to have a better performance than the SOI MOSFET. With proper design, the cutoff frequency can be as high as 6000 GHz with an effective channel length of 0.0368 μm and good microwave performance

Keywords

equivalent circuits; insulated gate field effect transistors; microwave field effect transistors; semiconductor device models; silicon-on-insulator; 6 THz; FET integrated circuits; SOI LDCFET; SOI lateral dual carrier FET; SOI technology; Si; cutoff frequency; device physics; dual carrier field effect transistors; effective channel length; microwave performance; Cutoff frequency; FET integrated circuits; Integrated circuit measurements; Integrated circuit technology; MOSFET circuits; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave transistors; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000

Conference_Location

Beijing

Print_ISBN

0-7803-5743-4

Type

conf

DOI

10.1109/ICMMT.2000.895611

Filename

895611