DocumentCode :
2781393
Title :
Theoretical analysis of XtreMOS™ power transistors
Author :
Roig, J. ; Desoete, B. ; Moens, P. ; Tack, M.
Author_Institution :
AMI Semicond. Belgium BVBA, Oudenaarde
fYear :
2007
fDate :
11-13 Sept. 2007
Firstpage :
422
Lastpage :
425
Abstract :
This work provides a new theoretical approach addressed to the XtreMOSTM and equivalent structures. An analytical sRonxBVdss model is provided to demonstrate the superior electrical performance of XtreMOSTM structure in the domain of the high power MOSFETs at medium voltage capability (50-200 V). Moreover, geometrical and technological parameters can be easily optimized by means of simple expressions. In order to support and validate the theoretical approach, numerical simulation and experimental data are included.
Keywords :
equivalent circuits; power transistors; XtreMOSTM; equivalent structures; geometrical parameters; high power MOSFET; medium voltage capability; power transistors; technological parameters; voltage 50 V to 200 V; Ambient intelligence; Analytical models; Dielectric breakdown; Electric breakdown; MOSFETs; Performance analysis; Power transistors; Silicon; Technological innovation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European
Conference_Location :
Munich
ISSN :
1930-8876
Print_ISBN :
978-1-4244-1123-8
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2007.4430968
Filename :
4430968
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2781393
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