DocumentCode :
2781500
Title :
Stress and temperature coupling effects on dislocation density reduction in multicrystalline silicon
Author :
Castellanos, Sergio ; Bertoni, Mariana I. ; Vogl, Michelle ; Fecych, Alexandria ; Buonassisi, Tonio
Author_Institution :
Dept. of Mech. Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
In multicrystalline silicon (mc-Si), the presence of dislocation-rich areas limits solar cell conversion efficiencies. Previous studies have demonstrated that dislocation densities higher than 106 cm-2 can dramatically decrease the minority carrier lifetime. High dislocation densities, and their decoration with impurities, can limit minority carrier lifetime even after phosphorous diffusion or hydrogen passivation. We previously proposed a method to remove dislocations from mc-Si by high-temperature annealing, demonstrating dislocation density reductions of 95% approximately. We demonstrated that the dependence of dislocation density reduction on annealing temperature is much more pronounced that the dependence on annealing time. In this contribution, we propose stress as an additional mechanism to enhance dislocation density reduction. We discuss the relationship between temperature, stresses and dislocation density in string ribbon.
Keywords :
annealing; carrier lifetime; dislocation density; elemental semiconductors; silicon; solar cells; dislocation density reduction; high-temperature annealing; hydrogen passivation; minority carrier lifetime; multicrystalline silicon; phosphorous diffusion; solar cell conversion efficiency; stress effects; temperature coupling effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616893
Filename :
5616893
Link To Document :
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