• DocumentCode
    2781545
  • Title

    A backside via holes etching technology for indium phosphide MMICs

  • Author

    Li, Fuxiao ; Post, G. ; Nissim, Y. ; Falcou, A. ; Courbet, C. ; Sanchez, S. ; Scavennec, A.

  • Author_Institution
    Nanjing Electron. Devices Inst., China
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    64
  • Lastpage
    67
  • Abstract
    A wet etching process for backside via holes suitable for use on InP MMICs technologies has been developed for an indium phosphide substrate. PMMA was used to mount the InP wafer onto a glass carrier. Sputtered Ta film was utilized as etch mask. HCl/H3PO4 solution realised a etch until a depth of 100 μm. It has been demonstrated that the wet etching backside process is controllable with large latitudes
  • Keywords
    III-V semiconductors; MMIC; etching; indium compounds; integrated circuit technology; 100 micron; H3PO4; HCl; HCl/H3PO4 solution; InP; InP MMICs; InP substrate; PMMA adhesive; Ta; Ta film etch mask; backside via holes etching technology; glass carrier; sputtered Ta film; wet etching process; Dry etching; Gallium arsenide; Glass; Indium phosphide; MMICs; Plasma applications; Plasma temperature; Sputter etching; Substrates; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-5743-4
  • Type

    conf

  • DOI
    10.1109/ICMMT.2000.895621
  • Filename
    895621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2781545