A 2-26 GHz MMIC power amplifier with low noise figure

Author

Xuejun, Chen ; Xiaojian, Chen ; Jianfeng, Gao ; Jinting, Lin

Author_Institution

Nanjing Electron. Devices Inst., China

fYear

2000

fDate

2000

Firstpage

68

Lastpage

71

Abstract

This paper describes the modeling, design, fabrication and performance of a monolithic 2~26 GHz PHEMT power amplifier with low noise characteristic. By using a distributed circuit and series gate capacitors, the measured gain is 6.5±0.5 dB with both in and out VSWR less than 2.0 in the broad band, and the measured output power is over 300 mW with 3.5~5.5 dB noise figure in 2~20 GHz frequency range. The amplifier is truly monolithic, with all matching and biasing and DC block circuitry included on the chip. The finished chip size is 3.2 mm×1.275 mm×0.1 mm

Keywords

HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; integrated circuit design; integrated circuit modelling; integrated circuit noise; wideband amplifiers; 0.5 micron; 2 to 26 GHz; 3.5 to 5.5 dB; 300 mW; 6.5 dB; GaAs; MMIC fabrication; MMIC modeling; MMIC power amplifier; PHEMT power amplifier; broadband amplifier; distributed circuit; low noise figure; monolithic power amplifier; onchip DC block circuitry; onchip biasing; onchip matching; pseudomorphic HEMT; series gate capacitors; Circuits; Fabrication; Frequency measurement; Gain measurement; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; PHEMTs; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000

Conference_Location

Beijing

Print_ISBN

0-7803-5743-4

Type

conf

DOI

10.1109/ICMMT.2000.895622

Filename

895622