Optimum Ge profile for the high cut-off frequency of SiGe HBT

Author

Kim, Sunghoon ; Kim, Kyunghae ; Yi, Junsin ; Lee, Hoongjoo ; Ryum, Byungryul

Author_Institution

Dept. of Electr. & Comput. Eng., Sung Kyun Kwan Univ., South Korea

fYear

2000

fDate

2000

Firstpage

84

Lastpage

87

Abstract

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT´s). Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. A HBT with a 15% triangular Ge profile shows a higher cut-off frequency and DC current gain than that with a 19% trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42 GHz to 84 GHz and from 200 to 600, respectively

Keywords

Ge-Si alloys; doping profiles; heterojunction bipolar transistors; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 42 GHz; 84 GHz; ATLAS; BLAZE; DC current gain; SiGe; SiGe HBT; SiGe heterojunction bipolar transistors; device simulations; high cutoff frequency; optimum Ge profile; trapezoidal Ge profile; triangular Ge profile; Bipolar transistors; Boron; Computational modeling; Cutoff frequency; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Shape; Silicon germanium; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000

Conference_Location

Beijing

Print_ISBN

0-7803-5743-4

Type

conf

DOI

10.1109/ICMMT.2000.895626

Filename

895626