DocumentCode :
2781720
Title :
Impact of defect type on hydrogen passivation effectiveness in multicrystalline silicon solar cells
Author :
Bertoni, M.I. ; Hudelson, S. ; Newman, B.K. ; Bernardis, S. ; Fenning, D.P. ; Dekkers, H.F.W. ; Cornagliotti, E. ; Zuschlag, A. ; Micard, G. ; Hahn, G. ; Coletti, G. ; Lai, B. ; Buonassisi, T.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, while iron silicide precipitates along the grain boundaries (above detection limits) were found to play a less significant role.
Keywords :
OBIC; electron backscattering; elemental semiconductors; grain boundaries; silicon; solar cells; μ-XRF; EBSD; LBIC; Si; defect etching; electron backscatter diffraction; grain boundaries; hydrogen passivation effectiveness; iron-silicide nanoprecipitates; laser beam-induced current; multicrystalline silicon solar cells; post-hydrogenation recombination activity; prehydrogenation recombination activity; synchrotron-based X-ray fluorescence microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616904
Filename :
5616904
Link To Document :
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