DocumentCode :
278203
Title :
Developments in integrated circuits and transistors for millimetre wave systems
Author :
Morgan, Gwyn
Author_Institution :
Univ. of Wales Coll. of Cardiff, UK
fYear :
1991
fDate :
33324
Firstpage :
42370
Lastpage :
42375
Abstract :
The author presents an overview of developments in millimetre wave integrated circuits and transistors for both military and commercial systems. Many transistor structures are available in many semiconductor material systems; metal semiconductor field effect transistors, modulation doped field effect transistors, heterojunction bipolar transistors, metal insulator semiconductor field effect transistors, permeable base transistors, resonant tunneling hot electron transistors etc. However, the first three types are the most important and, using them selectively, it is possible to obtain low noise temperatures, `power´ amplification, oscillators with low phase noise, and high integration. The author discusses these topics and provides various graphs to illustrate some of the points raised
Keywords :
Schottky gate field effect transistors; heterojunction bipolar transistors; high electron mobility transistors; microwave amplifiers; microwave integrated circuits; microwave oscillators; power amplifiers; reviews; solid-state microwave circuits; solid-state microwave devices; HBT; LNA; MESFET; MIC; MM-wave IC; MODFET; field effect transistors; heterojunction bipolar transistors; integrated circuits; low noise temperatures; low phase noise; millimetre wave systems; modulation doped; oscillators; semiconductor material systems; transistors;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Millimetre Wave Transistors and Circuits, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
181363
Link To Document :
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