Title :
Heterojunction bipolar transistors for millimetre wave applications
Author :
Topham, P.J. ; Dearn, A
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
Abstract :
The authors´ aim is to show the advantages of the heterojunction bipolar transistor (HBT) for applications at MM-wave frequencies; particularly where it complements the HEMT. The applications highlighted are low phase noise oscillators and high efficiency output stages. The GaAs-GaAlAs HBT combines the bipolar advantages of high transconductance, low output conductance and freedom from flicker noise, with the semi-insulating substrate and high electron mobility of GaAs
Keywords :
heterojunction bipolar transistors; microwave oscillators; solid-state microwave devices; GaAs-GaAlAs; HBT; MM-wave frequencies; heterojunction bipolar transistor; high efficiency output stages; low phase noise oscillators; microwave transistors; millimetre wave applications;
Conference_Titel :
Millimetre Wave Transistors and Circuits, IEE Colloquium on
Conference_Location :
London
