The design of a stabilised microstrip transistor oscillator for 44 GHz

Author

Centeno, A. ; Morgan, G.B.

Author_Institution

Sch. of Electr. Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK

fYear

1991

fDate

33324

Firstpage

42583

Lastpage

42586

Abstract

Many millimeter wave transistors are available, but at the present time the GaAs MESFET offers the best compromise of low l/f noise and low noise figure required for oscillators. Most commercially available MESFET´s are designed specifically for amplifier applications, but by placing them into a suitable embedding network they can be made to oscillate. Stabilisation is achieved by using a high Q, temperature compensated dielectric resonator. The authors discuss the design aspects of transistor oscillators for 44 GHz

Keywords

S-parameters; Schottky gate field effect transistors; dielectric resonators; microwave oscillators; microwaves; stability; strip line components; 44 GHz; DRO; EHF; GaAs; MESFET; MIC; MM-wave IC; embedding network; high-Q resonator; millimeter wave transistors; stabilised microstrip transistor oscillator; temperature compensated dielectric resonator;

fLanguage

English

Publisher

iet

Conference_Titel

Millimetre Wave Transistors and Circuits, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

181369

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=278208