Title :
The design of a stabilised microstrip transistor oscillator for 44 GHz
Author :
Centeno, A. ; Morgan, G.B.
Author_Institution :
Sch. of Electr. Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
Abstract :
Many millimeter wave transistors are available, but at the present time the GaAs MESFET offers the best compromise of low l/f noise and low noise figure required for oscillators. Most commercially available MESFET´s are designed specifically for amplifier applications, but by placing them into a suitable embedding network they can be made to oscillate. Stabilisation is achieved by using a high Q, temperature compensated dielectric resonator. The authors discuss the design aspects of transistor oscillators for 44 GHz
Keywords :
S-parameters; Schottky gate field effect transistors; dielectric resonators; microwave oscillators; microwaves; stability; strip line components; 44 GHz; DRO; EHF; GaAs; MESFET; MIC; MM-wave IC; embedding network; high-Q resonator; millimeter wave transistors; stabilised microstrip transistor oscillator; temperature compensated dielectric resonator;
Conference_Titel :
Millimetre Wave Transistors and Circuits, IEE Colloquium on
Conference_Location :
London
