Title :
Reflect type DC-20 GHz MMIC high performance SPST and SPDT switches
Author :
Yongsheng, Dai ; Xiaojian, Chen ; Tangsheng, Chen ; Lijie, Yang ; Lin, Liu ; Shuping, Gao ; Hui, Li ; Jinting, Lin
Author_Institution :
Nanjing Electron. Devices Inst., China
Abstract :
The design, fabrication, and performance of high performance reflect type DC-20 GHz single-pole single-throw (SPST) and single-pole double-throw (SPDT) MMIC switches are described in this paper. Low insertion loss (⩽2.5 dB), low input/output VSWR (⩽1.4), and high isolation (⩾47 dB) over DC to 20 GHz band are exhibited. The SPST switch´s chip size is 2.6 mm×1.1 mm×0.1 mm, and the SPDT switch´s chip size is 3.5 mm×1.3 mm×0.1 mm. These chips were fabricated by an ion implanted MMIC process and PCM technology to ensure a high yield and good uniformity between wafers and chips
Keywords :
MESFET integrated circuits; field effect MMIC; field effect transistor switches; integrated circuit design; ion implantation; microwave switches; switching circuits; 0 to 20 GHz; 2.5 dB; MMIC SPDT switches; MMIC SPST switches; PCM technology; fabrication; high isolation; high performance switches; ion implanted MMIC process; low input/output VSWR; low insertion loss; reflect type switch; single-pole double-throw switches; single-pole single-throw switches; Circuit topology; Design optimization; Gallium arsenide; Insertion loss; MESFETs; MMICs; Phase change materials; Resistors; Switches; Switching circuits;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000
Conference_Location :
Beijing
Print_ISBN :
0-7803-5743-4
DOI :
10.1109/ICMMT.2000.895659
