A novel multi-octave five-bit monolithic phase shifter

Author

Yongsheng, Dai ; Xiaojian, Chen ; Tangsheng, Chen ; Tufa, Yu ; Lin, Liu ; Lijie, Yang ; Shuping, Gao ; Jinting, Lin

Author_Institution

Nanjing Electron. Devices Inst., China

fYear

2000

fDate

2000

Firstpage

215

Lastpage

218

Abstract

The design, fabrication and performance of a novel multi-octave five-bit GaAs MMIC phase shifter is described. The topology was specifically selected to minimize process variations on performance. The topology of 22.5° and 11.25° phase shift bits is a sharing Lange coupler. Low peak phase error (PPE) (⩽5 degree for 180°, 90°, 45° phase shift bits, ⩽2.5° for 22.5°, 11.25° phase shift bits), low VSWR (⩽1.7), low insertion loss variations (⩽12.8±0.7 dB) are exhibited over 5 to 20 GHz frequency range. The chip size of the MMIC phase shifter is 4.2 mm×2.98 mm×0.1 mm

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; field effect MMIC; gallium arsenide; integrated circuit design; 5 to 20 GHz; GaAs; GaAs MMIC phase shifter; fabrication; five-bit monolithic phase shifter; low insertion loss variations; multi-octave phase shifter; sharing Lange coupler; Circuit topology; Costs; FETs; Insertion loss; MESFETs; MMICs; Phase shifters; Resistors; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2000, 2nd International Conference on. ICMMT 2000

Conference_Location

Beijing

Print_ISBN

0-7803-5743-4

Type

conf

DOI

10.1109/ICMMT.2000.895660

Filename

895660