DocumentCode :
2782315
Title :
Design of 2- and 3-terminal GaInP/GaAs concentrator cells for maximum yearly energy output
Author :
Haas, A.W. ; Wilcox, J.R. ; Gray, J.L. ; Schwartz, R.J.
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fYear :
2010
fDate :
20-25 June 2010
Abstract :
Two important factors in achieving maximum power output in a multi-junction concentrator solar cell are selecting optimal sub-cell band gaps and absorber layer thicknesses. This optimization is spectrum-dependent and does not guarantee maximum yearly energy delivery, as the distribution of spectral energy varies throughout the day and year. A simple, detailed-balance model may be used in this optimization, though detailed numerical models are ideal as the specifics of the cell structure can be incorporated. In this paper, a particular GaInP/GaAs tandem structure is optimized using ADEPT to show that maximum yearly energy delivery is achieved by optimizing under a mid-November spectrum.
Keywords :
gallium arsenide; solar absorber-convertors; solar cells; solar energy concentrators; GaAs; GaInP; GalnP-GaAs concentrator cells; absorber layer thicknesses; optimization; solar cell; subcell band gaps; Gallium arsenide; Numerical models; Optimization; Photonic band gap; Photovoltaic cells; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
ISSN :
0160-8371
Print_ISBN :
978-1-4244-5890-5
Type :
conf
DOI :
10.1109/PVSC.2010.5616934
Filename :
5616934
Link To Document :
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